Electron transport properties of a narrow-bandgap semiconductor Bi₂O₂Te nanosheet

A thin, narrow-bandgap semiconductor Bi 2 O Te nanosheet is obtained via mechanical exfoliation, and a Hall-bar device fabricated from it on heavily doped Si/SiO substrate studied at low temperatures. Gate transfer characteristic measurements show that the transport carriers in are of n-type. The carrier density, mobility, mean free path determined by Hall resistance longitudinal device, found electron quasi-two-dimensional (2D), strongly disordered regime. Magnetotransport for magnetic fields applied perpendicular to plane dominantly weak antilocalization (WAL) characteristics linear magnetoresistance (LMR) behavior high fields. We attribute WAL strong spin–orbit interaction (SOI) LMR classical origin disorder nanosheet. Low-field magnetoconductivity also performed analyzed based multi-channel Hikami–Larkin–Nagaoka theory with correction being taken into account. phase coherence length, spin relaxation effective 2D conduction channel number, coefficient term due extracted. It length several times smaller than its counterpart Se nanosheet, thus, an ultra-strong SOI present Our results reported this study would greatly encourage further studies applications emerging material.